| 摘要 |
PURPOSE:To obtain a semiconductor integrated device in which the increase of chip size caused by the increase of memory capacity is reduced, by connecting transistor electrode part in a memory cell and wiring by using a contact pattern, in the manner in which word line is wired right above a base electrode, and digit line is wired right above an emitter electrode. CONSTITUTION:Power supply line 11 of first wiring in a memory cell 10 is connected with the collector contact 15 of a bipolar transistor 14, and word line 12 of the first wiring is connected with the base contact 16 of the bipolar transistor 14. Digit line 13 of a second wiring is connected with the first wiring 19 connected with the emitter contact 17 of the bipolar transistor 14, by using a viahole 18. In such a constitution, connection of a transistor electrode with the word line and the digit line is determined depending upon whether electrode contact is present, instead of depending upon whether wiring exists or not. |
