发明名称 THIN FILM SWITCHING DEVICE
摘要 <p>PURPOSE:To obtain characteristics wherein voltage-current relation is symmetric with respect to positive and negative applied voltage, and uniformity is maintained among a plurality of devices, by making a semiconductor layer formed on both surfaces of a dielectric layer contain a pair of metal layers. CONSTITUTION:In a thin film switching element 24, the following are stacked in order, from one side surface of a transparent substrate 22; a metal layer 241, a semiconductor layer 242, a dielectric layer 243, a semiconductor layer 244 and a metal layer 245. The metal layer 241 is connected with a data bus line 25, and the metal layer 245 is connected with a picture element electrode 23. The semiconductor layers 242, 244 are formed of N-type amorphous silicon, and the dielectric layer 243 is formed of silicon nitride. In this liquid crystal display device 21, uniformity of display characteristics among a plurality of elements can be realized, and further display contrast can be remarkably improved.</p>
申请公布号 JPH01261880(A) 申请公布日期 1989.10.18
申请号 JP19880091180 申请日期 1988.04.12
申请人 SHARP CORP 发明人 INAMI TAKASHI;TAKATO YUTAKA
分类号 H01L49/02;G02F1/133;G02F1/136;G02F1/1365 主分类号 H01L49/02
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