| 摘要 |
<p>A radiation coupling device comprising at least three radiation guides (3,5,7) a first radiation guide (7) of which is divided on at least one end into at least two further radiation guides (3,5). According to the invention the radiation guides form part of a semiconductor layer structure having, in a cross-section in the direction of thickness, at least two radiation guiding layers (3,5) each comprising a further radiation guide. The layers are optically separated by a passive layer (4) which locally shows a strip-shaped reduction in thickness or an interruption where the two radiation guiding layers respectively are present within each other's amplification profile or coincide and thus form the first radiation guide.</p> |
