Method for making contacts.

摘要

A process for making borderless contacts through an insulating layer to active regions of a semiconductor device is disclosed. After deposition of a silicon nitride layer (18) and an insulation glass layer (20) on a substrate coating semiconductor devices, the contact windows are etched. The windows are etched through the glass layer with BCl3 etch gases. Next, the windows are etched through the silicon nitride with CH3F or O2/CHF3 gases.