| 摘要 |
Device for depositing a refractory metal on a substrate, comprising a conventional reactor 1 for reducing a hexafluoride of the refractory metal with hydrogen, additionally comprising a filament 10 of the refractory metal, considered to be arranged in the vicinity of the substrate 2, and means for supplying an electrical current to this filament and heating it to a temperature of the order of 1,500 to 2,000 DEG C. <IMAGE>
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