发明名称 MICROWAVE MONOLITHIC IC
摘要 PURPOSE:To easily form a pattern of a passive part and to reduce a transmission loss in a microwave band by a method wherein a region at the lower part of an active part of a semiconductor substrate is made thin, this region is surrounded by a heat-dissipating electrode and the passive part is formed on a thick region which is adjacent to the heat-dissipating electrode of the semiconductor substrate. CONSTITUTION:A semiconductor (GaAs) substrate 2 at the lower part of an active part 3 is made thin; this GaAs substrate 2 is surrounded by a heat- dissipating electrode, i.e., a gold-plated layer (PHS) 18; passive parts 4a, 4b are formed on the thick GaAs substrate 2. In a semiconductor region at the lower part of the individual parts 4a, 4b, a thickness H of the substrate 2 is set separately on the basis of a width W and a characteristic impedance of a microwave transmission line 16 at the passive parts 4a, 4b. By this setup, a pattern can be formed easily; the width of the microwave transmission line can be set to be large; a transmission loss of a line in a microwave band can be reduced.
申请公布号 JPH01257355(A) 申请公布日期 1989.10.13
申请号 JP19870315595 申请日期 1987.12.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOBIKI MICHIHIRO;YOSHIDA MASAHIRO;ISHIKAWA TAKAHIDE
分类号 H01L23/34;C03B29/06;C03B35/16;C03B35/18;F16C13/00;H01L21/822;H01L23/66;H01L27/04;H01L27/06 主分类号 H01L23/34
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