| 摘要 |
<p>PURPOSE:To prevent the generation of pin holes, by forming a protection film insoluble to ammonium fluoride, etc. on an SiO2 film. CONSTITUTION:An emitter region 3 is formed in a base region 2 in a substrate 1. The region 3 is connected to an emitter wiring 4, and the emitter wiring 4 is connected to an emitter electrode 5. Lead-out of the electrode is performed from the electrode 5 on the region 2 by means of a bonding wire 8. The protection film 9 insoluble to ammonium fluoride and hydrofluoric acid is formed on the SiO2 film 7 under the electrode 5. Poly-Si, aluminum, etc. are used as the materials of the film 9.</p> |
