| 摘要 |
PURPOSE:To obtain multilayered wirings of aluminum electrodes and transparent electrodes having low resistance and excellent pattern forming and contact characteristics by forming a thin silicon layer between the electrode consisting of an aluminum metal and the transparent electrode layer provided thereon. CONSTITUTION:The thin silicon layer 3 is formed between the aluminum electrode 2 provided on a glass substrate 1 and the transparent electrode 4 layer provided thereon. The thin silicon layer 3 is thinly formed on the film of the aluminum 2 formed in such a manner, then the silicon, has the high resistance to hydrochloric acid, phosphoric acid, etc. and etching soln. for ITO (indium tin oxide) and aluminum and, therefore, the selective etching with the ITO 4 is possible. The silicon and the aluminum generate an eutectic point to effect reaction and silicification 5, thus lowering the resistance in the subsequent annealing. The contact resistance between the aluminum 2 and the ITO 4 is thereby decreased and the wiring of the aluminum electrode 2 and the ITO electrode 4 having the excellent patterning characteristic is enabled with the good contact. |
