| 摘要 |
PURPOSE:To respond to high speed operation by a semiconductor by accumulating an oxide or an insulator of nitride on a high melting point metal silicide at the stage before the oxidizing step of producing an LSI MOS semiconductor device containing the silicide, thereby preventing the oxidation and the sublimation of the silicide and the sublimation of the mixture of the high melting point metal oxide and the dioxidized silicon. CONSTITUTION:A field oxidized film 2, a gate oxidized film 3 and an Mo-Si film 4 are sequentially formed on a silicon wafer 1, and a dioxidized silicon 5 of an insulator is accumulated on the upper surface of the film 4. Then, the silicon 5 is opened by a photolithographic method, with the opened silicon 5 as a mask the films 4, 3 are partly opened. Then, this semiproduct is oxidized to approx. 900-1,000 deg.C, thereby forming an oxidized film 6, As<+> or P<+> ions are implanted through the film 6 with energy of approx. 40-60Kev in the amount of approx. 1X10<10> -1X10<16> ions/cm<2>, thereby forming source 7 and drain 8. The silicon 5 is eventually removed, an intermediate insulating film 9 is then formed, electrodes 10 of the source 7 and drain 8 are then formed, and an MOS semiconductor device is formed. |
