| 摘要 |
PURPOSE:To carry out the formation of a film having good adhering strength onto the front and the back surfaces of a substrate, in a vapor growth apparatus due to photochemical reaction, by carrying out light irradiation from multiple directions. CONSTITUTION:In an apparatus for depositing a film of a substance such as Si3N4 formed by photochemical reaction on the both surfaces of a substrate such as a silicon wafer 3 on a support base 2 from vapor phase such as a monosilane gas or an ammonia gas, light sources 4, 5, which perform light irradiation for advancing photochemical reaction to the substrate 3 from multiple directions, are mounted. By this mechanism, uniform film is coated to all surfaces of the substrate 3. |
