| 摘要 |
PURPOSE:To enable improving the degree of integration, by forming a silicon film after impurity to form a semiconductor region is introduced into a substrate, forming a semiconductor region in the substrate by performing spread- diffusion of impurity, and forming an intermediate conducting film by diffusing impurity into the silicon film. CONSTITUTION:Impurity 13A, 14A to form semiconductor regions 13, 14 is introduced into the main surface part of a semiconductor substrate of forming region of semiconductor regions 13, 14 of MISFET Qs, Qn, Qp. After a silicon film 19c is formed so as to come into contact with the main surface of a semiconductor substrate in the region where impurity 13A, 14A is introduced, a semiconductor regions are formed by diffusing impurity 13A, 14A in the main surface part of the semiconductor substrate, and a silicon film 19c is controlled as a specified resistance value by diffusing impurity in a silicon film 19c. Thereby, the PN junction of the semiconductor regions can be shallow, and short channel effect can be prevented, so that the degree of integration can be improved. |
