发明名称 |
PROTECTIVE THYRISTOR WITHOUT A GATE ELECTRODE |
摘要 |
The invention relates to gateless thyristors and triacs used for protecting against over voltages. In order to obtain a high holding current without adversely affecting the current resistance capacities of the thyristor or the triac, a special impurity concentration profile is provided, in which the P type layer under the cathode layer has a very small thickness (less than 10 microns). |
申请公布号 |
DE3665515(D1) |
申请公布日期 |
1989.10.12 |
申请号 |
DE19863665515 |
申请日期 |
1986.03.07 |
申请人 |
THOMSON-CSF |
发明人 |
NOGUIER, JEAN-PIERRE;MONTAUT, JEAN-PAUL |
分类号 |
H01L29/10;H01L29/87;(IPC1-7):H01L29/74 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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