发明名称 |
Process of manufacturing alternating layers of monocrystalline semiconductor material and layers of isolating material. |
摘要 |
<p>Method for producing a layer of a monocrystalline semiconductor material on a layer of an insulating material (20). To do this, an epitaxial growth is effected in a cavity (30) closed by layers of dielectric material (20, 40), starting from a seed (38) of monocrystalline semiconductor material (38) of a substrate. Growth first occurs vertically, perpendicularly to the seed (38), and then horizontally in the plane of the cavity (30). …<??>This method thus permits three-dimensional integration of semiconductor components. …<IMAGE>… </p> |
申请公布号 |
EP0336831(A1) |
申请公布日期 |
1989.10.11 |
申请号 |
EP19890400917 |
申请日期 |
1989.04.04 |
申请人 |
THOMSON-CSF |
发明人 |
PRIBAT, DIDIER;KARAPIPERIS, LEONIDAS |
分类号 |
H01L21/205;H01L21/20;H01L21/762;H01L21/822;H01L21/84 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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