METHOD OF CORRECTING DEFECT IN CIRCUIT PATTERN

摘要

A method of correcting a circuit pattern such as an X-ray mask, carried out by first preparing a circuit pattern structure where a circuit pattern on an conductive film (101) is coated with a protective film (204), then forming a hole or a slit by irradiating a high-intensity focused ion beam (502) to a dropout defective portion in the circuit pattern of the circuit pattern structure, and plating such hole or slit while utilizing the conductive film (101) as a plating electrode, thereby forming a metal frame (108) to correct the dropout defective portion.