发明名称 MANUFACTURE OF SEMICONDUCTOR OPTICAL DEVICE
摘要 PURPOSE:To enable an optical characteristic to be unified by heating under a specific condition after resin sealing so as to adjust a light transmitting characteristic of transparent resin. CONSTITUTION:An infrared ray reflection type sensor has a transparent epoxy resin part 1 covering the surface of a light-receiving semiconductor chip 3 placed on a lead wire 5a and a transparent epoxy resin part 1 covering the surface of a light-receiving semiconductor chip 4 placed on a lead wire 5b. Then, the transparent epoxy resin part 1 contains an imine black color, in which light transmittivity in a specific wavelength range changes by a chemical change due to heating and after sealing both semiconductor chips 3 and 4 together with an opaque resin part 2, a light transmitting part 1 is given heat treatment at 80-180 deg.C for one min-6hours in order to adjust light transmittivity. Thereby, the variations of a product can be reduced.
申请公布号 JPH01253928(A) 申请公布日期 1989.10.11
申请号 JP19880081502 申请日期 1988.04.01
申请人 NEC CORP 发明人 SOEJIMA KATSUTOSHI
分类号 H01L21/56;H01L23/29;H01L23/31;H01L31/02;H01L31/0232;H01L33/50;H01L33/54;H01L33/56 主分类号 H01L21/56
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