GALLIUM ARSENIDE SEMICONDUCTOR MEMORY INTEGRATED CIRCUIT

摘要

PURPOSE:To improve soft error-proof property by a method wherein Schottky diodes are inserted between the inputs and outputs of a pair of inverter circuits in cross connection and resistance elements are inserted between a negative power source and the inputs of the respective inverter circuits. CONSTITUTION:The anode and cathode of a Schottky diode D1 are connected to the output node 8 of a first E/D inverter and the input node 16 of a second E/D inverter respectively. The anode and cathode of a Schottky diode D2 are connected to the output node 9 of the second E/D inverter and the input node 15 of the first E/D inverter respectively. Further, resistance elements R1 and R2 are inserted between a negative electric power source 17 and the respective input nodes 15 and 16. With this constitution, the voltage amplitude of data stored in a memory cell can be enlarged and soft error-proof property can be improved.