Power field effect transistor driver circuit.

摘要

A power field effect transistor driver circuit manufacturable in a MOS process is provided wherein a power field effect transistor (8) provides high current drive capability for driving fractional horsepower DC motors or other inductive loads (9). The power field effect transistor driver circuit provides reliable operation under environmentally harsh conditions such as overvoltage transients at the supply voltage terminals (1,2), loss of ground supply terminal (2) connection, and short circuits at the load terminal (3).