发明名称 |
Dynamic random access memory capable of fast erasing of storage data |
摘要 |
This invention relates to a semiconductor memory having a high speed operation and a high integration density. When a high integration semiconductor memory is applied to a large scale computer system, storage data must be erased at a high speed for data security. The present invention erases the storage data by a method which is different from the write method of conventional prior art. In the invention, the erasing operation is made by continuously selecting word lines while sense amplifiers are kept in this on-state. The present invention includes a control circuit for attaining such an operation, and can be used for a semiconductor memory implemented in a computer system accessed by a plurality of users.
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申请公布号 |
US4873672(A) |
申请公布日期 |
1989.10.10 |
申请号 |
US19870051715 |
申请日期 |
1987.05.20 |
申请人 |
HITACHI, LTD.;HITACHI DEVICE ENGINEERING CO., LTD. |
发明人 |
ETOH, JUN;SHIMOHIGASHI, KATSUHIRO;MIYAZAWA, KAZUYUKI;KIMURA, KATSUTAKA;AKIBA, TAKESADA |
分类号 |
G11C11/401;G11C11/4072;G11C11/4078;G11C11/409 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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