发明名称 |
Method and apparatus for providing interconnection between metallization layers on semiconductor devices |
摘要 |
A metal stud (24) is provided for interconnecting levels of metallization separated by an insulator on a semiconductor slice (10). A lead (12) is coated with a refractory metal (14) and a platable metal cap (16). A photoresist (18 ) is then applied and a cavity (22) is formed within the photoresist (18 ). The cavity (22) is plated to form the stud (24). The stud (24) is clad with a corrosion resistant layer (28).
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申请公布号 |
US4873565(A) |
申请公布日期 |
1989.10.10 |
申请号 |
US19870115282 |
申请日期 |
1987.11.02 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ROANE, BOBBY A. |
分类号 |
H01L21/768;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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