发明名称 Method and apparatus for providing interconnection between metallization layers on semiconductor devices
摘要 A metal stud (24) is provided for interconnecting levels of metallization separated by an insulator on a semiconductor slice (10). A lead (12) is coated with a refractory metal (14) and a platable metal cap (16). A photoresist (18 ) is then applied and a cavity (22) is formed within the photoresist (18 ). The cavity (22) is plated to form the stud (24). The stud (24) is clad with a corrosion resistant layer (28).
申请公布号 US4873565(A) 申请公布日期 1989.10.10
申请号 US19870115282 申请日期 1987.11.02
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 ROANE, BOBBY A.
分类号 H01L21/768;H01L23/522 主分类号 H01L21/768
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