| 摘要 |
A method of forming a metallic silicide on silicon or polysilicon in which a masking layer such as silicon dioxide is formed on a silicon slice and patterned to expose selected areas of the slice surface. The slice is then sputter etched followed by in situ deposition of a metal layer. The slice is heated to convert the portion of the metal layer in contact with the silicon and/or polysilicon to a metal silicide, then the non-converted metal is removed by a selective etchant. According to another embodiment of the invention a titanium layer is deposited and reacted in an ambient including nitrogen to prevent the out-diffusion of silicon through the TiSi2 and titanium layers. |
