| 摘要 |
PURPOSE:To obtain an IGBT, whose collector voltage VCE(tn) is made to decrease or to be eliminated and moreover an ON-voltage is small, by a method wherein a process which makes a surface resistance lower by introducing an N-type impurity is adopted before a gold diffusing process, halfway in the whole manufacturing process of a conductivity modulation type MOSFET (IGBT). CONSTITUTION:A process in which an N-type impurity such as P, As, or Sb is ion-implanted to control a surface resistivity and then another process in which gold is diffused are adopted before at least one of three processes of the whole manufacturing process of an IGBT provided with an N<-> base layer. Those are i) : a process in which a gate oxide film 14 is formed on a surface of the N-type base layer, ii): a process in which a polysilicon layer 15 is formed on the gate oxide film 14, and iii) : a process in which the polysilicon layer 15 is selectively photoetched to form a polysilicon gate 16. So that, a collector voltage VCE(tn) accompanied with a gold diffusion can be decreased or eliminat ed. |
