发明名称 TRANSISTOR DEVICE
摘要 PURPOSE:To reduce the Joule's heat generated in a semiconductor substrate by a method wherein the rear surface of a semiconductor substrate of a field- effect transistor is bonded onto a non-metallized ceramic surface of a transistor package. CONSTITUTION:A non-metallized part 30 is provided on the second metallized surface of a common grounding electrode 22 out of an input, the common grounding and an output electrodes 21, 22 and 23 having the first, the second and the third metallized surfaces of a ceramic substrate 1 so that the rear surface of a semiconductor substrate 3 of a field effect transistor may be bonded onto the part 30 by a thermal conductive bonding agent etc. An input terminal 81 and an output terminal 82 are respectively connected to the input electrode 21 and the output electrode 23. In such a constitution, the semiconductor substrate 3 and a common ground bonding pads 5 are electrically connected on the surface of the substrate 3 while input, common grounding and output pads are respectively connected to the input, common grounding and output electrodes 21, 22 and 23.
申请公布号 JPH01253243(A) 申请公布日期 1989.10.09
申请号 JP19880078010 申请日期 1988.04.01
申请人 HITACHI LTD 发明人 KATSUEDA MINEO;OKABE TAKEAKI;YOSHIDA ISAO
分类号 H01L21/52 主分类号 H01L21/52
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