| 摘要 |
<p>PURPOSE:To regulate an interface characteristic in a silicon substrate while transistor characteristics such as a threshold voltage Vth, a current amplification factor hFE and the like are kept properly by a method wherein, when a MOS- type semiconductor device is manufactured, a heat treatment is executed in an atmosphere containing hydrogen before a wiring layer is formed. CONSTITUTION:An n<+> type source region 2 and an n<+> type drain region 3 are formed in prescribed positions of a P-type silicon substrate. Then, a gate insulating film 4 is formed on the surface of the silicon substrate 1; a gate electrode 5 is formed on it. Then, an SiO2 film which collectively covers the silicon substrate 1, the gate insulating film 4 on it and the gate electrode 5 is formed; after that, e.g., an SiN film 7 is formed on it. Then, windows are opened in an AsSG film 8 formed on it, the SiN film 7 and the SiO2 film 6; contact holes are made in the source region 2 and the drain region 3. An annealing operation is executed in nitrogen gas containing, e.g., 4% of hydrogen at 400 deg.C for 60 minutes. Then, wiring parts 9 of, e.g., a Ti/TiN/Al-Si structure are formed; a semiconductor device is completed.</p> |
