| 摘要 |
PURPOSE:To make metal diffusion generate in electrode metal and metal in paste, and form a bump of close contact, by performing baking or drying of a bump electrode in a reducing atmosphere, in a forming method of the bump electrode on an electrode, which bump electrode is formed on at least a first electrode by using conducting paste. CONSTITUTION:On a silicon wafer 11, a bump is formed by using a screen printing machine. Printing is executed in the manner in which paste 23 is made to flow through the opening of a screen mask 21 by using squeegee 22. After that, hydrogen is made to flow into a reducing furnace, while the wafer subjected to screen printing is heated at a temperature range of 100-600 deg.C. Thereby, the paste bump printed on an Al electrode and an oxide film on an Al electrode interface are reduced and eliminated, and a paste bump 15 is formed on the pure Al surface. |
