发明名称 BONDING WIRE FOR ELEMENT OF SEMICONDUCTOR AND THE LIKE
摘要 PURPOSE:To obtain a wire of a copper wire or a copper alloy wire having an insulating and corrosionproof coating layer which can be preserved a long time and whose coefficient of friction at the passage of a clamper and a capillary in a bonding apparatus is small by a method wherein the insulating and corrosionproof coating layer is formed on the surface of the copper wire or the copper alloy wire and a lubricating layer is formed on this layer. CONSTITUTION:A wire 1 for an element such as a semiconductor or the like is formed in such a way that a lubricating layer 2 is formed on the surface of a copper wire or a copper alloy wire 4 having an insulating and corrosionproof coating layer 3; The coating layer 3 is formed of an organic resin such as polyurethane, polyethylene, an epoxy or the like; the lubricating layer 2 is formed of an ethylene tetrafluoride resin, a surface-active agent or the like. In addition, it is desirable that a layer thickness of the coating layer 3 formed of the organic resin is about 0.3-2.0mum and that a layer thickness of the lubricating layer 2 formed of the ethylene tetrafluoride resin or the surface-active agent is about 0.05-1.0mum. The surface-active agent is an anionic surface-active agent, a nonionic active agent or the like. For example, polyoxyethylene alkylether sulfate, polyoxyethylene alkylether or the like can be used. It is possible to prevent an electrical short circuit and oxidation.
申请公布号 JPH01251727(A) 申请公布日期 1989.10.06
申请号 JP19880079039 申请日期 1988.03.31
申请人 MITSUBISHI METAL CORP 发明人 ISHII TOSHINORI;MORI TAMOTSU;TANAKA MASAYUKI
分类号 H01L21/60;H01B7/00 主分类号 H01L21/60
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