| 摘要 |
PURPOSE:To acquire a good blue light emitting element by doping an n-type layer with alkaline metal. CONSTITUTION:An n-type ZnSe layer 12 is formed by an MOCVD method on one principal plane of an n<+>GaAs substrate 11. Then the n<+>GaAs substrate 11 whereon an n-type ZnSe layer is formed is put in a quartz ampule together with a Zn source 22, an Se source 23, and Li2Se 24. The ampule is then sealed at a low pressure of 5X10<-6>Torr and heated for one hour at 350 deg.C to diffuse Li. The surface is cleaned and then an undoped ZnSe layer 13 is formed on the n-type ZnSe layer 12 whereon Li is diffused. An Au film is deposited to form a Schottky electrode 14. As a result, good blue light emission of good properties which controls emission from a deep level can be acquired. |
