Process for fabricating electrical contacts

摘要

The invention relates to a process for fabricating metal patterns (e.g. electrical contacts) by means of the lift-off technique. On a GaAs semiconductor layer, a Ge layer is deposited. By means of a lithographic step, a photoresist layer applied is patterned. In a dry-etching process carried out subsequently, the Ge layer is removed in the region of the photoresist holes, in such a way that the photoresist layer is undercut and the semiconductor surface is partially exposed. By means of vapour deposition over the entire area, the contact material is applied and patterned by a lift-off process. Subsequently, the remaining germanium is removed by means of a dry-etching process.