| 摘要 |
PURPOSE:To accurately form a gate electrode having a small gate length, and to suppress a short-channel effect by forming a gate metal film remaining by anisotropically etching at the gate electrode. CONSTITUTION:A <28>Si<+> is selectively ion implanted to a semiinsulating GaAs substrate 1, and an operating layer 2 and a drain contact layer 3d are formed. Then, a silicon oxide film 4 is deposited on the substrate 1 and selectively etched, whereby parts covering the whole layer 3d and the partial layer 2 remain. Then, the surface is covered with a gate metal film 5 made of tungsten silicide. It is etched back by anisotropically etching, the film 5 remains only on the sidewall of the film 4, and is formed as a gate electrode 5A. Thereafter, with the film 4 and electrode 5A as masks <28>Si<+> ions are implanted to the substrate 1, and a source contact layer 3s is formed. Thus, a size between the source and the drain can be set long, thereby suppressing a short channel effect. |
