发明名称 MOS stage with high output resistance particularly for integrated circuits.
摘要 <p>A first N-channel transistor (M1) and a second N-channel transistor (M2) are cascode connected and the source electrode of the first transistor is connected to the ground; a third P-channel transistor (M3) and a fourth P-channel transistor (M4) are also cascode connected, and the source of the fourth transistor is connected to a supply voltage; the drains of the second and third transistors (M2, M3) are mutually connected to act as output terminal. According to the invention, the absolute values of the threshold voltages of the second and third transistors are lower than the threshold voltages of the first and fourth transistors, and the gates of the first and second transistors are furthermore mutually connected to act as input terminal for a voltage signal, while the gates of said third and fourth transistors are mutually connected to act as input terminal for a bias voltage.</p>
申请公布号 EP0335102(A2) 申请公布日期 1989.10.04
申请号 EP19890102973 申请日期 1989.02.21
申请人 SGS-THOMSON MICROELECTRONICS S.R.L. 发明人 DEVECCHI, DANIELE;TORELLI, GUIDO
分类号 H03F3/345;H03F1/22 主分类号 H03F3/345
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