Process for obtaining a single crystal heteroepitaxial ternary layer on a binary layer and crucible therefor.

摘要

Process for obtaining by heteroepitaxy a monocrystalline layer of a ternary compound on a monocrystalline substrate of binary composition, in which a saturated solution (A) of the ternary compound is brought into contact with the substrate (90), the whole being heated to a first temperature and then cooled to a second temperature.
The dynamics of epitaxial growth are improved according to the invention by arranging the substrates (90) at the surface of the solution (A).