SILICON SOURCES SUITABLE FOR USE IN MOLECULAR BEAM EPITAXY DEPOSITION

摘要

A silicon source for molecular beam epitaxial deposition heated by electric current through the silicon is provided wherein the silicon is configured in a plurality of filaments positioned between two broader electrical contact areas. …The figures shows such a source comprising Z-shaped silicon filaments 15, 16, 17 integrated with an extending between electrical contact headers 18, 19. A current source is connected in series with the source and causes resistance heating of the source.