Non-volatile semiconductor memory device and method for manufacture thereof.

摘要

A non-volatile semiconductor memory comprises a stacked gate electrode having a control electrode (508) and a floating gate electrode (506) provided via an insulation layer (505) over the channel area (504) between a source (503) and a drain (502), and a sidewall gate electrode (511a) being provided via an insulation layer (505a, 509a) over the channel area (504) and the sidewall of the stacked gate. By applying a suitable voltage, the sidewall gate can be used as a selector gate so that read errors do not occur even when overerase is caused by electrical erase methods. The sidewall gate electrode can be manufactured by self-alignment processes, thereby this memory is suitable for miniaturization and high levels of integration.