| 摘要 |
<p>A method for recording, reading and erasing data bits in a data storage device is described. Using extended scanning tunnelling microscopy (STM) techniques, a tunnelling electron current by resistive heating selectively melts discrete areas of a state-transformable film; then heat is dissipated rapidly, writing data bits by changing the film in the areas from a first state to a second state wherein an electronic property, such as conductance, work function or band gap, in the areas is changed. Again, using extended STM techniques, the effect of this changed electronic property of the film on the tunnelling current is measured for reading the written data bits. Minimising the effect of blemishes on the material is effected, during operation in STM constant current mode by measuring dI/dV or dI/ds, and during operation in STM variable current (constant gap) mode by measuring (dI/dV)/I or (dI/ds)/I. Also, by using extended STM techniques, data bits can be selectively erased by resistance heating the film to a temperature higher than the crystallisation temperature for a sufficient period of time, restoring selected discrete areas to the first state and each affected electronic property substantially to its original condition.</p> |
