| 摘要 |
PURPOSE:To enable recording with a light beam of low output and high-speed erasing and to obtain excellent preservable stability of recording by forming a recording layer which is reversibly changed in phase between a crystalline phase and amorphous phase of an alloy having a specific compsn. CONSTITUTION:The recording layer which is reversibly changed in phase between the crystalline phase and the amorphous phase is formed of the alloy having the compsn. expressed by the formula (Te100-xAu)100-yMy (x and y denote atomic%). In the formula, M is at least >=1 elements selected from Se, Sb, Si, and Al; x, y respectively satisfy 1<=x<=15 and 0<y<=20. Se and Sb are the elements to easily change the TeAu alloy to the amorphous alloy and Si and Al are the materials to increase the crystallization temp. of the TeAu alloy. The possibility of impairing the excellent characteristics of the TeAu alloy is eliminated if the amt. of these elements to be added is <=20atomic%. The recording with the light beam of the low output is thereby enabled and the high-speed erasing is enabled. The excellent preservable stability of recording is obtd. |
