发明名称 |
Heterojunction semiconductor device with <001> tilt |
摘要 |
A method is disclosed of epitaxially depositing a semiconductor material on a substrate of different material while accommodating lattice mismatch in a manner that results in improved epitaxially deposited material. In a disclosed embodiment GaAs is epitaxially deposited by molecular beam epitaxy on a silicon substrate having a {100} crystallographic surface tilted in the <001> direction. Improved semiconductor devices, made using the disclosed technique, are also set forth.
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申请公布号 |
US4872046(A) |
申请公布日期 |
1989.10.03 |
申请号 |
US19870091631 |
申请日期 |
1987.09.01 |
申请人 |
UNIVERSITY OF ILLINOIS |
发明人 |
MORKOC, HADIS;FISCHER, RUSS |
分类号 |
H01L21/20;H01L21/203;H01L29/04 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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