发明名称 |
Selective etching process |
摘要 |
By adjusting the AC field conditions, i.e., by grounding the environment of a substrate being etched with a chlorine-containing plasma, a significant increase in etch selectivity is achieved. By applying a similar AC field adjustment to the reaction chamber surfaces, excellent etch uniformity is achieved in conjunction with excellent selectivity.
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申请公布号 |
US4871420(A) |
申请公布日期 |
1989.10.03 |
申请号 |
US19880150490 |
申请日期 |
1988.02.10 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY, AT&T BELL LABORATORIES |
发明人 |
ALEXANDER, JR., FRANK B.;FOO, PANG-DOW;SCHUTZ, RONALD J. |
分类号 |
H01L21/3065;H01L21/3213 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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