| 摘要 |
PURPOSE:To obtain a semiconductor element used for a bidirectional communication system of the simple structure which employs no wvelength tuner by forming a photodetecting element available for the light of the wavelength shorter than the wavelength of the light to be produced on the light emitting surface of a light emitting element. CONSTITUTION:Light emitting diodes 22-24 of double hetero structure are formed by liquid phase growing method on an N type InP substrate 21, a dioxidized silicon (SiO2) film 31 is formed on the back surface, a circular window is opened by lithographic technique, and zinc (Zn) is then diffused. The film 31 is removed, an N type electrode 29 is formed, and a P type electrode 32 for a ring-shaped photodetecting element is formed inside. A P type electrode 28 and an SiO2 film 26 for isolation are formed, gold plating 27 is formed, thereby forming a light emitting element having a photodetecting element. The electrode 29 is commonly used for light emitting and receiving, the light emission is performed by applying a voltage between the electrodes 29 and 28 and the photodetection is performed by applying a voltage between the electrodes 29 and 32. |
