| 摘要 |
PURPOSE:To obtain a switching element which is possessed of a memorable switching property and improved in a switching repetition number and a storage stability by a method wherein the element provided with such a structure that an organic insulator thin film layer containing at least an organic compound possessed of a pi electron level and an inorganic oxide thin film layer of metal oxide are pinched between a pair of electrodes. CONSTITUTION:In a basic structure of a switching element, even if an organic insulating layer 3 is not formed of insulating organic compound but formed of semiconductive organic compound, the semiconductive organic compound can be used if it has a pielectron level. An organic material such as phthalocyanine or the like can be used as an applicable organic material possessed of a pi electron level. It is preferable that the thickness of the organic layer 3 is 1000Angstrom or less and 3Angstrom or more. An inorganic oxide layer 4 is laminated on the organic insulator layer 3. An inorganic oxide used for the inorganic oxide layer 4 is insulating or semiconductive, for example, Al2O3 or the like can be used for the layer 4. The thickness of the inorganic oxide layer is 200Angstrom or less. Electrodes 2 and 5 which pinch the insulating layers between them are high in conductivity. By these processes, the switching property of an element of this design can be remarkably improved in reproducibility and stability.
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