| 摘要 |
1,250,085. Magnetic storage arrangements. INTERNATIONAL BUSINESS MACHINES CORP. 13 Nov., 1969 [16 Dec., 1968], No. 55562/69. Heading H3B. In a magnetic storage arrangement, a storage location defined by the crossing point of orthogonal conductors 3, 7, comprises a number of thin, magnetically anisotropic films 2, 4, Fig. 1, having different critical switching fields H K , so that by applying a particular sequence of pulses to the conductors each film may be made to store a different bit of a word. In Fig. 1, the films are separated by a non-magnetic material 5, which may be electrically conducting, and each of films 2 is magnetically coupled to a correspondingly disposed and magnetically similar one of films 4. Alternatively, Fig. 4, the films 4 may be replaced by a single film 8 whose cross-sectional area equals the total cross-sectional area of films 2. The magnetic flux paths around the films and conductors may be closed by keepers 15, 16. To write into the structure of Fig. 4, a pulse 17, Fig. 6A, of sufficient magnitude to switch all three films 12, 13 and 14 to the hard direction is applied to word conductor 3, overlapping with a pulse 18 on conductor 7 which establishes a tipping field along the easy axis. When pulse 17 is terminated, the three films have a common direction of magnetization along the easy axis which represents a " 0 " or a " 1 " depending on the polarity of pulse 18. The operation is repeated, using a pulse 19 of such lesser magnitude that only the two most easily switched films are affected, the tipping pulse 20 being shown with a polarity opposite to that of pulse 18. To write into the third film, a smaller pulse 21 is applied on conductor 3, with a coincident pulse 22 on conductor 7. Reading is carried out by reversing the pulse sequence in conductor 3, giving output pulses 26, 27 and 28 in conductor 7. The operations may be speeded up by using a descending or ascending staircase waveform in place of the discrete writing or reading pulses of Fig. 6A, as in Fig. 6B (not shown). A method of making the storage locations in multiple by vapour deposition is described, the films of least H K lying furthest from conductor 3. The films are of Permalloy, and the variation of H K is achieved by choice of cobalt concentration. The films may have different widths, Fig. 3 (not shown). |
