| 摘要 |
PURPOSE:To purify the surface of an electrode film, and to improve a contact between the electrode film and an electrode film as an uppermost section by removing an insulating film so as to be retreated from the internal surface of an opening section to form a recess section and depositing the electrode film as an electrode in the uppermost section so as to coat the insulating film in the uppermost section while coating the internal surface of the opening section and intrude into the recess section. CONSTITUTION:An opening section 113 deep enough ot reach a drain region 104 is shaped on the drain region 104 through anisotropic dry-etching of a laminate composed of an SiO2 film 106, an Si3N4 film 107, a CVD.SiO2 film 108, a poly Si layer 109, a CVD.SiO2 film 110, a poly Si layer 111 and a CVD.SiO2 film 112. The CVD.SiO2 films 108, 110 and 112 exposed from the internal surface of the opening section 113 are removed so as to be retreated from the internal surface of the opening section 13 through wet-etching using HF or isotropic dry-etching employing CF4+H2 gas, thus forming a recess section 114. Accordingly, poly Si layers 109, 111 and 115 and the drain region 104 are connected mutually. |
