| 摘要 |
PURPOSE:To inhibit the grain growth of a crystal, and to improve the reliability of a semiconductor device without changing the resistance value of a resistance element by forming multilayer structure, in which polycrystalline silicon layers and thin silicon oxide films are laminated alternately, as the resistance element. CONSTITUTION:A polycrystalline silicon layer 6 is deposited onto the surface including a contact hole through a CVD method, and an silicon oxide layer 7 is shaped onto the surface of the polycrystalline silicon layer 6 in a dry oxygen atmosphere at 600 deg.C. A polycrystalline silicon layer 8 is deposited onto the silicon oxide layer 7 through the CVD method. The polycrystalline silicon layer 8, the silicon oxide layer 7 and the polycrystalline silicon layer 6 are etched selectively in succession, and a resistance element connected to a gate electrode 4 in the contact hole is shaped. Since there is the silicon oxide layer 7 at that time, the growth of crystal grains as a post-process is inhibited, and the change of a resistance value is suppressed. |
