发明名称 WIRE BONDING OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To enable a copper wire to be used for bonding process for cutting down the manufacturing cost by a method wherein the copper wire is fused to pressure-fix a metallic ball formed on the end of the wire on an electrode of a semiconductor element and then the wire drawn out of the end of a bonding tool is pressed down upon a conductor surface of a substrate to ultrasonic-oscillate and heat the bonding tool for metallic junction. CONSTITUTION:A heated metallic ball 14 at the end of a wire is pressure-fixed on an electrode 6 of a semiconductor element 5 and then specified length of a copper wire 12 is drawn out of the end of a bonding tool 11. In such a state, an upper clamper 15 is opened and a lower clamper 16 is closed to lower the tool 11 and the lower clamper 16 so that the copper wire 12 may be pressed down upon a copper foil pattern 2 on a substrate 1. At this time, the tool 11 is heated by a tool heater 17 up to specified temperature and simultaneously subjected to specified ultrasonic oscillation through the intermediary of an ultrasonic oscillation transfer member 18. Through these procedures, the friction heat is evolved out of the gap between the upper wire 12 and the copper foil 2 so that the upper wire 12 may be metallic-junctioned with the copper foil pattern 2 by the friction heat as well as the heating of the heater 17 and the substrate 1.
申请公布号 JPH01245535(A) 申请公布日期 1989.09.29
申请号 JP19880072108 申请日期 1988.03.28
申请人 TOSHIBA CORP 发明人 YAMAGUCHI MASAYOSHI
分类号 H01L21/607;H01L21/60 主分类号 H01L21/607
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