| 摘要 |
PURPOSE:To enhance the resolving power, plasma etching and heat resistances of a prescribed resist by allowing a pattern of the resist to react with a specified compd. to form a mask. CONSTITUTION:A substrate obtd. by sticking a thin Al film 12 on an Si water 11 is coated with a polymer having OH groups, e.g., a compd. represented by formula I as a resist 13 and this resist 13 is exposed and developed to form a pattern. The resist 13 is then allowed to react with an Si compd. having one or more benzene rings to enhance the etching and heat resistances of the resist 13 and the film 12 is patterned, e.g., by plasma etching. The Si compd. is preferably a compd. having Si-N, Si-O or Si-Cl and a compd. represented by formula II may be used as the Si compd. |
