| 摘要 |
PURPOSE:To prevent a gate from being destroyed in processes of manufacture by forming with the same material, a wiring for connecting between a gate electrode and a protective diode, an electrode of a gate electrode diode, and the gate electrode. CONSTITUTION:In a MOSLSI, a field insulating film 2 is selectively provided on the surface of a semiconductor substrate 1, for isolation among elements. Many input pads 3 comprising an aluminum film are provided on the periphery of the substrate 1, to which wiring 6 composed of a double-layered polycide film is connected. A branch line 6a of the wiring 6 is connected to a protective diode D and a branch line 6b is connected to a gate electrode G1 of an input initial stage buffer B, composed of a complementary MISFET. The gate G1 also comprises a polycide film as the wiring 6. The protective diode D is constructed, utilizing a pn junction between a source region 8 and a p well PW, whereby the pn junction is broken down when excessive charges are accumulated on the gate electrode G1 of the complementary MISFET, thus effectually preventing the gate from being broken down. |
