| 摘要 |
PURPOSE:To boost the gate of a MOS transistor(TR) without using a charge pump circuit requiring a capacitor, etc., by charging the gate of the source- follower-connected MOS TR at an (n) channel through a diode. CONSTITUTION:When an MOS TRM3 at the (n) channel is in an OFF condition, an MOS TRM2 at a P channel is made into an ON condition. The drain current of the MOS TRM2 flows through a diode Dn, and charges the section between the gate sources of an MOS TRM1 at the (n) channel for an output. For this, the MOS TRM1 is turned on, and an output voltage starts to rise. The discharge of the charges between the gate sources of the MOS TRM1 is restrained by the diode D0. |
