| 摘要 |
PURPOSE:To easily work a bit line and to eliminate a need to open a window for bit-line contact use by a method wherein the bit line is formed at the lower part of a storage node electrode and the bit line is formed at the lower part of a capacitor electrode. CONSTITUTION:A MOSFET is formed, via a gate insulating film 3, by a gate electrode 4 inside a memory cell separated by device-isolation insulating films 2. A bit line 10 is connected to a pad electrode 7 by a bit-line contact 9; the electrode 7 is connected to an n-type diffusion layer. A storage node electrode 13 is situated on the bit line 10 and an interlayer insulating film 11; it is connected to the electrode 7 by a contact 12. A side of the electrode 13 is utilized as a capacitor capacitance; even when a film thickness is made thick, a working operation of the bit line is not affected. A capacitor insulating film 14 and a capacitor electrode 15 are formed on the electrode 13. Since the electrode 15 is situated at the upper part of the bit line, it is not required to open a window to be used to form the bit-line contact in the electrode 15. |
