| 摘要 |
<p>The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics, photoconductivity and structural stability is made possible by adding one or more band gap increasing elements to the alloys and devices. The element or elements are added at least to a portion of the active photoresponsive regions of amorphous silicon devices. One such element is oxygen which increases the photoconductivity and stability of such alloys over that of materials without the element incorporated therein. Other elements such as nitrogen and carbon can also be used to widen the band gap in order to improve the photoresponse and conductivity of the alloys. The elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition. A density of states reducing element such as hydrogen or fluorine, alone or in combination, allows the band gap increasing element(s) to be added to the alloy to adjust the band gap without reducing the electronic qualities of the alloy. The reducing element(s) can be added during deposition of the alloy or following deposition. The addition of increasing element(s) to the alloys increases the band gap to a widened utilization width for a particular device to increase the photoabsorption efficiency and to thus enhance the device photoresponse. The element(s) can be added in varying amounts, in discrete layers or in substantially constant amounts in the alloys and devices.</p> |
