| 摘要 |
<p>An ion-sensitive FET sensor comprises (a) a MOSFET having a gate portion; (b) a redox layer having a redox function covering a surface of an isolating membrane of the gate portion; and (c) an ion-sensitive layer, exhibiting ion selectivity, covering a surface of the redox layer. Pref. an electrically conductive layer (d) is located between (a) and (b), (d) opt. being a multilayer structure comprising a conductive layer on a thin metal membrane. Pref. layer (b) is of thickness 0.01 microns - 1.0 mm and layer (c) is of thickness 1 microns - 10 mm. Layer (d) is of thickness 0.01-1 microns and comprises carbon (esp. or metal or metal oxide, opt. on a membrane Au or (esp.Ni or Cr.</p> |
