发明名称 |
Stacked channel heterojunction fet. |
摘要 |
A field effect transistor comprising a high electron mobility field effect transistor (HEMT) portion and a metal-Schottky-gate field effect transistor (MESFET) portion having respective channel layers (10, 22) controlled by a common gate (26). At microwave and higher radio frequencies, the drain current capability of the HEMT portion reaches an upper limit; the MESFET portion takes over to provide drain current capability greater than this limit.
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申请公布号 |
EP0334006(A1) |
申请公布日期 |
1989.09.27 |
申请号 |
EP19890102046 |
申请日期 |
1989.02.06 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
KOHN, ERHARD;LEVY, HAROLD M.;LEE, HAO |
分类号 |
H01L29/812;H01L21/338;H01L27/06;H01L29/06;H01L29/10;H01L29/778 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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