发明名称 PHOTOMASK
摘要 PURPOSE:To extremely decrease the absorption of exposing light in a metallic film and to prevent the damage and breakage of the metallic film by interposing multilayered dielectric films having high reflectivity between a substrate which allows the transmission of incident light and the metallic film which shuts off the incident light in a prescribed region. CONSTITUTION:The multilayered dielectric films 4 which reflect the incident light 10a are interposed between the substrate 1 and metallic film 2 of the photomask formed with the metallic film 2 which shuts off the incident light in the prescribed region on the exist face side of the substrate 1 which allows the transmission of the incident light 10a. The films 4 are laminated between the substrate 1 and the metallic film 2, has the extremely high reflectivity to the incident light and mostly reflects the light transmitted through the substrate 1 and, therefore, the failure of the metallic film 2 by the absorption of the light is obviated. The multilayered films 4 are formed by alternately superposing several to several tens layers of thin dielectric films having low refractive indices to a laminar state. The reflectivity can be increased by properly selecting the layer constitution. The generation of the breakage of the metallic film is thereby obviated even if an excimer laser, etc., having the extremely high peak power are used.
申请公布号 JPH01243062(A) 申请公布日期 1989.09.27
申请号 JP19880068230 申请日期 1988.03.24
申请人 NIKON CORP 发明人 KAMIYA SABURO
分类号 G03F1/00;H01L21/027;H01L21/30 主分类号 G03F1/00
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